DMN2300U-7

new-10%

Manufacturer part number:DMN2300U-7

Manufacturer:Diodes Incorporated

Description:MOSFET MOSFET BVDSS: 8V-24V SOT23,3K

Case Package:SOT-23

Datasheet:DMN2300U-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY, LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	430mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	3.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	175m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	64.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.24A Ta
Gate Charge (Qg) (Max) @ Vgs	1.6nC @ 4.5V
Rise Time	2.8ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	1.4A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Height	1.1mm
Length	3mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free