NTB125N02R

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NTB125N02R

Manufacturer part number:NTB125N02R

Manufacturer:ON Semiconductor

Description:NTB125N02R datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTB125N02R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	24V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	235
Reach Compliance Code	not_compliant
Current Rating	125A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.98W Ta 113.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.72W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3440pF @ 20V
Current - Continuous Drain (Id) @ 25°C	95A Ta 120.5A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	120.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	95A
Drain-source On Resistance-Max	0.0062Ohm
Drain to Source Breakdown Voltage	24V
Pulsed Drain Current-Max (IDM)	250A
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead