SI8469DB-T2-E1

new-10%

Manufacturer part number:SI8469DB-T2-E1

Manufacturer:Vishay Siliconix

Description:MOSFET 8V 4.6A 1.8W 64mOhms @ 4.5

Case Package:SOT-23

Datasheet:SI8469DB-T2-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-UFBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	64mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	780mW Ta 1.8W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	780mW
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	64m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 4V
Current - Continuous Drain (Id) @ 25°C	4.6A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	22ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±5V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3.6A
Gate to Source Voltage (Vgs)	5V
DS Breakdown Voltage-Min	8V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free