DMN3016LFDF-7

new-10%

Manufacturer part number:DMN3016LFDF-7

Manufacturer:Diodes Incorporated

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 12m Ω @ 11A, 10V ±20V 1415pF @ 15V 25.1nC @ 10V 30V 6-UDFN Exposed Pad

Case Package:SOT-23

Datasheet:DMN3016LFDF-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	S-PDSO-N6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.02W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	25.1nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	10A
Drain-source On Resistance-Max	0.012Ohm
DS Breakdown Voltage-Min	30V
RoHS Status	ROHS3 Compliant