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IRF830ALPBF

IRF830ALPBF

IRF830ALPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 1.4Ohm @ 3A, 10V ±30V 620pF @ 25V 24nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA

SOT-23

IRF830ALPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package I2PAK
Weight 2.387001g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.4Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 74W Tc
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Input Capacitance 620pF
Drain to Source Resistance 1.4Ohm
Rds On Max 1.4 Ω
Height 9.65mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.958000 $1.958
10 $1.847170 $18.4717
100 $1.742613 $174.2613
500 $1.643975 $821.9875
1000 $1.550919 $1550.919
IRF830ALPBF Product Details

IRF830ALPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.This device conducts a continuous drain current (ID) of 5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.4Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF830ALPBF Features


a continuous drain current (ID) of 5A
the turn-off delay time is 21 ns
single MOSFETs transistor is 1.4Ohm
a threshold voltage of 4.5V
a 500V drain to source voltage (Vdss)


IRF830ALPBF Applications


There are a lot of Vishay Siliconix
IRF830ALPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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