DMN3135LVT-7

new-10%

Manufacturer part number:DMN3135LVT-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 30V 3.5A TSOT26

Case Package:SOT-23

Datasheet:DMN3135LVT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	840mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.6 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	305pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Rise Time	4.6ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	2.5 ns
Turn-Off Delay Time	13.1 ns
Continuous Drain Current (ID)	3.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3.3A
Drain-source On Resistance-Max	0.047Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free