CSD85301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website
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CSD85301Q2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Number of Pins
6
Weight
9.695537mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Max Power Dissipation
2.3W
Terminal Form
NO LEAD
Base Part Number
CSD85301
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
6 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
27m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
469pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
5.4nC @ 4.5V
Rise Time
26ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
10V
Drain Current-Max (Abs) (ID)
5A
Drain-source On Resistance-Max
0.039Ohm
Avalanche Energy Rating (Eas)
3.8 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate, 5V Drive
Height
800μm
Length
2mm
Width
2mm
Thickness
750μm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.21545
$0.64635
6,000
$0.20155
$1.2093
15,000
$0.19460
$2.919
CSD85301Q2 Product Details
CSD85301Q2 Description
The CSD8530102 is a 20V23mQ N-Channe device in SON2X2 mm plastic package and dual independent MOSFET. The two FET are designed as half-bridge structures for synchronous buck and other power applications. In addition, the device can be used in adapters, USB input protection and battery charging applications. The dual field effect transistor has a low drain-to-source turn-on resistance that minimizes loss and loss.
There are fewer parts with limited space.
CSD85301Q2 Features
Low On-Resistance
Dual Independent MOSFETs
Space Saving SON2x2 mm Plastic Package Optimized for 5 V Gate Driver
Avalanche Rated
Pb and Halogen Free
RoHS Compliant
CSD85301Q2 Applications
Point-of-Load Synchronous Buck Converter for Applications in NetworkingTelecom.and Computing Systems
Adaptor or USB Input Protection for Notebook PCs and Tablets