US6K2TR

new-10%

Manufacturer part number:US6K2TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 30V 1.4A TUMT6

Case Package:SOT-23

Datasheet:US6K2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	380MOhm
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	1W
Peak Reflow Temperature (Cel)	260
Current Rating	1.4A
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*K2
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	6 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2nC @ 5V
Rise Time	6ns
Fall Time (Typ)	8 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.4A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free