DMN3190LDW-13

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DMN3190LDW-13

Manufacturer part number:DMN3190LDW-13

Manufacturer:Diodes Incorporated

Description:DMN3190LDW-13 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:DMN3190LDW-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	320mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Reference Standard	AEC-Q101
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	4.5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	87pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	2nC @ 10V
Rise Time	8.9ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	15.6 ns
Turn-Off Delay Time	30.3 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
Drain-source On Resistance-Max	0.19Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant