SI1026X-T1-GE3

new-10%

Manufacturer part number:SI1026X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET Dual N-Ch MOSFET 60V 1.25 ohms @ 10V

Case Package:SOT-23

Datasheet:SI1026X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	32.006612mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	3Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Powers
Max Power Dissipation	250mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI1026
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	15 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 25V
Current - Continuous Drain (Id) @ 25°C	305mA
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	500mA
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.305A
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.2mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free