DMN4009LK3-13

new-10%

Manufacturer part number:DMN4009LK3-13

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 40V 18A DPAK

Case Package:SOT-23

Datasheet:DMN4009LK3-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	DMN4009LK3-13
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2012
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.19W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	7.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2072pF @ 20V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 4.5V
Rise Time	18.5ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14.9 ns
Turn-Off Delay Time	37.3 ns
Continuous Drain Current (ID)	27.6A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0085Ohm
Pulsed Drain Current-Max (IDM)	96.6A
DS Breakdown Voltage-Min	40V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant