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DMG4N60SJ3

DMG4N60SJ3

DMG4N60SJ3

Diodes Incorporated

MOSFET NCH 600V 3A TO251

SOT-23

DMG4N60SJ3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 41W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 532pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 3A
RoHS Status ROHS3 Compliant

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