IRF8113PBF

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IRF8113PBF

Manufacturer part number:IRF8113PBF

Manufacturer:Infineon Technologies

Description:IRF8113PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF8113PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.6m Ω @ 17.2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2910pF @ 15V
Current - Continuous Drain (Id) @ 25°C	17.2A Ta
Gate Charge (Qg) (Max) @ Vgs	36nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	17.2A
Drain-source On Resistance-Max	0.0056Ohm
Pulsed Drain Current-Max (IDM)	135A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	48 mJ
RoHS Status	ROHS3 Compliant