2N7002W

new-10%

Manufacturer part number:2N7002W

Manufacturer:ON Semiconductor

Description:2N7002W datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2N7002W Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	7.5Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	280mW
Turn On Delay Time	12.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA Ta
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	55.8 ns
Continuous Drain Current (ID)	310mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Feedback Cap-Max (Crss)	7 pF
Height	1.1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free