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CSD17308Q3

CSD17308Q3

CSD17308Q3

Texas Instruments

CSD17308Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD17308Q3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17308
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.3m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 4.5V
Rise Time 5.7ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 9.9 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 47A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 65 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.3 V
Feedback Cap-Max (Crss) 35 pF
Height 1.1mm
Length 3.3mm
Width 3.3mm
Thickness 1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.282299 $0.282299
10 $0.266320 $2.6632
100 $0.251245 $25.1245
500 $0.237024 $118.512
1000 $0.223607 $223.607
CSD17308Q3 Product Details

CSD17308Q3 Description


The CSD17308Q3 is a low-thermal-resistance 30V N-channel NexFETTM Power MOSFET optimized for 5V gate driving. It is ideal for control or synchronous FET applications and has been engineered to minimize power conversion losses. Suitable for use as a point-of-load synchronous buck converter in networking, telecommunications, and computing systems.



CSD17308Q3 Features


  • Halogen-free

  • Avalanche rated

  • Ultra low Qg and Qgd

  • Optimized for 5V gate drive



CSD17308Q3 Applications


  • Power Management

  • Communications & Networking

  • Computers & Computer Peripherals


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