DMN95H2D2HCTI

new-10%

Manufacturer part number:DMN95H2D2HCTI

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 950V 6A ITO220AB

Case Package:SOT-23

Datasheet:DMN95H2D2HCTI Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Active
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	40W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1487pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	20.3nC @ 10V
Drain to Source Voltage (Vdss)	950V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	6A
Pulsed Drain Current-Max (IDM)	24A
DS Breakdown Voltage-Min	950V
Avalanche Energy Rating (Eas)	360 mJ
RoHS Status	ROHS3 Compliant