DMNH6008SPSQ-13

new-10%

Manufacturer part number:DMNH6008SPSQ-13

Manufacturer:Diodes Incorporated

Description:MOSFET NCH 60V 16.5A POWERDI

Case Package:SOT-23

Datasheet:DMNH6008SPSQ-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.6W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2597pF @ 30V
Current - Continuous Drain (Id) @ 25°C	16.5A Ta 88A Tc
Gate Charge (Qg) (Max) @ Vgs	40.1nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	88A
Drain Current-Max (Abs) (ID)	16.5A
Pulsed Drain Current-Max (IDM)	140A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	194 mJ
RoHS Status	ROHS3 Compliant