DMG7401SFG-7

new-10%

Manufacturer part number:DMG7401SFG-7

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 30V 9.8A POWERDI3333

Case Package:SOT-23

Datasheet:DMG7401SFG-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Weight	72.007789mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	940mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11.3 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 12A, 20V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2987pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9.8A Ta
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	15.4ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 20V
Vgs (Max)	±25V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	9.8A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Height	850μm
Length	3.35mm
Width	3.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free