RJK1002DPP-A0#T2

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Manufacturer part number:RJK1002DPP-A0#T2

Manufacturer:Renesas Electronics America

Description:MOSFET (Metal Oxide) N-Channel 7.6m Ω @ 35A, 10V ±20V 6450pF @ 10V 94nC @ 10V 100V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:RJK1002DPP-A0#T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Operating Temperature	150°C
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	30W Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.6m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6450pF @ 10V
Current - Continuous Drain (Id) @ 25°C	70A Ta
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$3.90000	$3.9
500	$3.861	$1930.5
1000	$3.822	$3822
1500	$3.783	$5674.5
2000	$3.744	$7488
2500	$3.705	$9262.5

RJK1002DPP-A0#T2 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6450pF @ 10V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).