DMP21D0UFB4-7B

new-10%

Manufacturer part number:DMP21D0UFB4-7B

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 20V 770MA 3DFN

Case Package:SOT-23

Datasheet:DMP21D0UFB4-7B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, LOW THRESHOLD
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	430mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	990mW
Case Connection	DRAIN
Turn On Delay Time	7.1 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	495m Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 10V
Current - Continuous Drain (Id) @ 25°C	770mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.54nC @ 8V
Rise Time	8ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	18.5 ns
Turn-Off Delay Time	31.7 ns
Continuous Drain Current (ID)	1.17A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.86A
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	-20V
Height	350μm
Length	1.05mm
Width	650μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free