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IPZ40N04S55R4ATMA1

IPZ40N04S55R4ATMA1

IPZ40N04S55R4ATMA1

Infineon Technologies

N-Channel Tape & Reel (TR) 5.4m Ω @ 20A, 10V ±20V 1300pF @ 25V 23nC @ 10V 8-PowerVDFN

SOT-23

IPZ40N04S55R4ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 17μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 40A
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0063Ohm
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 53 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.37043 $1.85215
10,000 $0.35651 $3.5651
25,000 $0.35448 $8.862
IPZ40N04S55R4ATMA1 Product Details

IPZ40N04S55R4ATMA1 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 53 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.A maximum pulsed drain current of 160A is the maximum peak drain current rated for this device.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 40V.Its overall power consumption can be reduced by using drive voltage (7V 10V).

IPZ40N04S55R4ATMA1 Features


the avalanche energy rating (Eas) is 53 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 160A.


IPZ40N04S55R4ATMA1 Applications


There are a lot of Infineon Technologies
IPZ40N04S55R4ATMA1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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