SI3442DV datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
SI3442DV Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
SuperSOT™-6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.6W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
60mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
365pF @ 10V
Current - Continuous Drain (Id) @ 25°C
4.1A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
8V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.16383
$0.49149
SI3442DV Product Details
SI3442DV Description
SI3442DV is a 20v N-Channel Logic Level Enhancement Mode Field Effect Transistor. The onsemi SI3442DV is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is tailored to minimize on-state resistance. The SI3442DV is particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
SI3442DV Features
4.1 A, 20 V. RDS(ON) = 0.06 ? @ VGS = 4.5 V
RDS(ON) = 0.075 ? @ VGS =2.7 V.
Proprietary SuperSOT?-6 package design using the copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.