DMP6023LE-13

new-10%

DMP6023LE-13

Manufacturer part number:DMP6023LE-13

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 60V 7A SOT223

Case Package:SOT-23

Datasheet:DMP6023LE-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Weight	188.014037mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	HIGH RELIABILITY
Capacitance	2.569nF
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2569pF @ 30V
Current - Continuous Drain (Id) @ 25°C	7A Ta 18.2A Tc
Gate Charge (Qg) (Max) @ Vgs	53.1nC @ 10V
Rise Time	7.1ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	62 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	18.2A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.028Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	62.9 mJ
Max Junction Temperature (Tj)	150°C
Height	1.8mm
Length	6.5mm
Width	3.5mm
RoHS Status	ROHS3 Compliant