DP0150ALP4-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DP0150ALP4-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
450mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Gain Bandwidth Product
80MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
80MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Height
350μm
Length
1mm
Width
600μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.980480
$2.98048
10
$2.811774
$28.11774
100
$2.652617
$265.2617
500
$2.502468
$1251.234
1000
$2.360819
$2360.819
DP0150ALP4-7 Product Details
DP0150ALP4-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 6V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 80MHz.Maximum collector currents can be below 100mA volts.
DP0150ALP4-7 Features
the DC current gain for this device is 120 @ 2mA 6V the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 80MHz
DP0150ALP4-7 Applications
There are a lot of Diodes Incorporated DP0150ALP4-7 applications of single BJT transistors.