DPLS4140E-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DPLS4140E-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DPLS4140
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 5V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-360mV
Max Breakdown Voltage
140V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
-7V
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.125663
$0.125663
10
$0.118550
$1.1855
100
$0.111840
$11.184
500
$0.105509
$52.7545
1000
$0.099537
$99.537
DPLS4140E-13 Product Details
DPLS4140E-13 Overview
In this device, the DC current gain is 100 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -360mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 360mV @ 300mA, 3A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 150MHz.Input voltage breakdown is available at 140V volts.When collector current reaches its maximum, it can reach 4A volts.
DPLS4140E-13 Features
the DC current gain for this device is 100 @ 1A 5V a collector emitter saturation voltage of -360mV the vce saturation(Max) is 360mV @ 300mA, 3A the emitter base voltage is kept at -7V a transition frequency of 150MHz
DPLS4140E-13 Applications
There are a lot of Diodes Incorporated DPLS4140E-13 applications of single BJT transistors.