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DPLS4140E-13

DPLS4140E-13

DPLS4140E-13

Diodes Incorporated

DPLS4140E-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DPLS4140E-13 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DPLS4140
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage140V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage-360mV
Max Breakdown Voltage 140V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) -7V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14382 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.125663$0.125663
10$0.118550$1.1855
100$0.111840$11.184
500$0.105509$52.7545
1000$0.099537$99.537

DPLS4140E-13 Product Details

DPLS4140E-13 Overview


In this device, the DC current gain is 100 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -360mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 360mV @ 300mA, 3A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 150MHz.Input voltage breakdown is available at 140V volts.When collector current reaches its maximum, it can reach 4A volts.

DPLS4140E-13 Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
a transition frequency of 150MHz

DPLS4140E-13 Applications


There are a lot of Diodes Incorporated DPLS4140E-13 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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