PBSS9110D,115 Overview

This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As a result, the part has a transition frequency of 100MHz.A breakdown input voltage of 100V volts can be used.During maximum operation, collector current can be as low as 1A volts.

PBSS9110D,115 Features

the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS9110D,115 Applications

There are a lot of Nexperia USA Inc. PBSS9110D,115 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting