FJAF4310OTU Overview
In this device, the DC current gain is 70 @ 3A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 500mA, 5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).Parts of this part have transition frequencies of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
FJAF4310OTU Features
the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz
FJAF4310OTU Applications
There are a lot of ON Semiconductor FJAF4310OTU applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
