DRDN010W-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DRDN010W-7 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
18V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DRDN010
Pin Count
6
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Transistor Type
NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO)
18V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100mA 1V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
18V
Transition Frequency
100MHz
Max Breakdown Voltage
18V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
150
Height
1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.169931
$0.169931
10
$0.160312
$1.60312
100
$0.151238
$15.1238
500
$0.142678
$71.339
1000
$0.134601
$134.601
DRDN010W-7 Product Details
DRDN010W-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 100MHz.There is a breakdown input voltage of 18V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.
DRDN010W-7 Features
the DC current gain for this device is 150 @ 100mA 1V the vce saturation(Max) is 500mV @ 30mA, 300mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 100MHz
DRDN010W-7 Applications
There are a lot of Diodes Incorporated DRDN010W-7 applications of single BJT transistors.