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DRDN010W-7

DRDN010W-7

DRDN010W-7

Diodes Incorporated

DRDN010W-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DRDN010W-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 18V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DRDN010
Pin Count6
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Transistor Type NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO) 18V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 1V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage18V
Transition Frequency 100MHz
Max Breakdown Voltage 18V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 150
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3657 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.169931$0.169931
10$0.160312$1.60312
100$0.151238$15.1238
500$0.142678$71.339
1000$0.134601$134.601

DRDN010W-7 Product Details

DRDN010W-7 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 100MHz.There is a breakdown input voltage of 18V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.

DRDN010W-7 Features


the DC current gain for this device is 150 @ 100mA 1V
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz

DRDN010W-7 Applications


There are a lot of Diodes Incorporated DRDN010W-7 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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