DXTP07100BFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTP07100BFG-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
900mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.22533
$0.45066
6,000
$0.21239
$1.27434
10,000
$0.19944
$1.9944
50,000
$0.19728
$9.864
DXTP07100BFG-7 Product Details
DXTP07100BFG-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device exhibits a collector-emitter breakdown at 100V.
DXTP07100BFG-7 Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 500mV @ 200mA, 2A
DXTP07100BFG-7 Applications
There are a lot of Diodes Incorporated DXTP07100BFG-7 applications of single BJT transistors.