2SC3649S-TD-H Overview

This device has a DC current gain of 140 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 450mV @ 50mA, 500mA.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Parts of this part have transition frequencies of 120MHz.In extreme cases, the collector current can be as low as 1.5A volts.

2SC3649S-TD-H Features

the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz

2SC3649S-TD-H Applications

There are a lot of ON Semiconductor 2SC3649S-TD-H applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface