KSA539YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 15mA, 150mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -200mA.Product comes in TO-92-3 supplier package.The device has a 45V maximal voltage - Collector Emitter Breakdown.Collector current can be as low as 200mA volts at its maximum.
KSA539YTA Features
the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
the supplier device package of TO-92-3
KSA539YTA Applications
There are a lot of ON Semiconductor KSA539YTA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
