FMMT413TA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 10mA 10V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 1mA, 10mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.A maximum collector current of 100mA volts can be achieved.

FMMT413TA Features

the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 150MHz

FMMT413TA Applications

There are a lot of Diodes Incorporated FMMT413TA applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting