FZT655TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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FZT655TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
150V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT655
Number of Elements
1
Voltage
150V
Element Configuration
Single
Current
1A
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
180mV
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.187776
$0.187776
10
$0.177147
$1.77147
100
$0.167120
$16.712
500
$0.157660
$78.83
1000
$0.148736
$148.736
FZT655TA Product Details
FZT655TA Overview
This device has a DC current gain of 50 @ 500mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.When VCE saturation is 500mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).A 1A continuous collector voltage is necessary to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In the part, the transition frequency is 30MHz.Input voltage breakdown is available at 150V volts.Maximum collector currents can be below 1A volts.
FZT655TA Features
the DC current gain for this device is 50 @ 500mA 5V a collector emitter saturation voltage of 180mV the vce saturation(Max) is 500mV @ 200mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 30MHz
FZT655TA Applications
There are a lot of Diodes Incorporated FZT655TA applications of single BJT transistors.