ZXTN4006ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN4006ZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN4006
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 320mV
Current - Collector Cutoff (Max)
50nA ICBO
Collector Emitter Breakdown Voltage
200V
Max Breakdown Voltage
200V
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
1A
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.058391
$0.058391
500
$0.042934
$21.467
1000
$0.035779
$35.779
2000
$0.032825
$65.65
5000
$0.030677
$153.385
10000
$0.028536
$285.36
15000
$0.027598
$413.97
50000
$0.027137
$1356.85
ZXTN4006ZTA Product Details
ZXTN4006ZTA Overview
This device has a DC current gain of 100 @ 150mA 320mV, which is the ratio between the base current and the collector current.A constant collector voltage of 1A is necessary for high efficiency.The emitter base voltage can be kept at 7V for high efficiency.There is a breakdown input voltage of 200V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZXTN4006ZTA Features
the DC current gain for this device is 100 @ 150mA 320mV the emitter base voltage is kept at 7V
ZXTN4006ZTA Applications
There are a lot of Diodes Incorporated ZXTN4006ZTA applications of single BJT transistors.