ZTX458 Overview

In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation (Max) of 500mV @ 6mA, 50mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 300mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.A maximum collector current of 300mA volts can be achieved.

ZTX458 Features

the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz

ZTX458 Applications

There are a lot of Diodes Incorporated ZTX458 applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver