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FZT657QTA

FZT657QTA

FZT657QTA

Diodes Incorporated

FZT657QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT657QTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 3W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 30MHz
Frequency - Transition 30MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.166922 $0.166922
10 $0.157474 $1.57474
100 $0.148560 $14.856
500 $0.140151 $70.0755
1000 $0.132218 $132.218
FZT657QTA Product Details

FZT657QTA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A transition frequency of 30MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

FZT657QTA Features


the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 500mV @ 10mA, 100mA
a transition frequency of 30MHz

FZT657QTA Applications


There are a lot of Diodes Incorporated FZT657QTA applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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