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FZT657TA

FZT657TA

FZT657TA

Diodes Incorporated

FZT657TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT657TA Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC 300V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT657
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.682474 $0.682474
10 $0.643844 $6.43844
100 $0.607399 $60.7399
500 $0.573019 $286.5095
1000 $0.540584 $540.584
FZT657TA Product Details

FZT657TA Overview


In this device, the DC current gain is 50 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.The part has a transition frequency of 30MHz.Breakdown input voltage is 300V volts.The maximum collector current is 500mA volts.

FZT657TA Features


the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz

FZT657TA Applications


There are a lot of Diodes Incorporated FZT657TA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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