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FZT688BTA

FZT688BTA

FZT688BTA

Diodes Incorporated

FZT688BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT688BTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT688
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 3A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 4A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.78000 $0.78
500 $0.7722 $386.1
1000 $0.7644 $764.4
1500 $0.7566 $1134.9
2000 $0.7488 $1497.6
2500 $0.741 $1852.5
FZT688BTA Product Details

FZT688BTA Overview


In this device, the DC current gain is 400 @ 3A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 4A.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.This device can take an input voltage of 12V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

FZT688BTA Features


the DC current gain for this device is 400 @ 3A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 150MHz

FZT688BTA Applications


There are a lot of Diodes Incorporated FZT688BTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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