BCW31,215 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 210mV @ 2.5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 32V volts.A maximum collector current of 100mA volts is possible.

BCW31,215 Features

the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 210mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BCW31,215 Applications

There are a lot of Nexperia USA Inc. BCW31,215 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter