Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MJE15029G

MJE15029G

MJE15029G

ON Semiconductor

MJE15029G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE15029G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -120V
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) 260
Current Rating -8A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 2V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 9.28mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.395680 $4.39568
10 $4.146868 $41.46868
100 $3.912140 $391.214
500 $3.690698 $1845.349
1000 $3.481790 $3481.79
MJE15029G Product Details

MJE15029G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 30MHz.Maximum collector currents can be below 8A volts.

MJE15029G Features


the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 30MHz

MJE15029G Applications


There are a lot of ON Semiconductor MJE15029G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News