BC856CW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
BC856CW-G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Power - Max
150mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.022325
$0.022325
500
$0.016416
$8.208
1000
$0.013680
$13.68
2000
$0.012550
$25.1
5000
$0.011729
$58.645
10000
$0.010911
$109.11
15000
$0.010552
$158.28
50000
$0.010376
$518.8
BC856CW-G Product Details
BC856CW-G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Collector current can be as low as 100mA volts at its maximum.
BC856CW-G Features
the DC current gain for this device is 220 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA
BC856CW-G Applications
There are a lot of Comchip Technology BC856CW-G applications of single BJT transistors.