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BC856CW-G

BC856CW-G

BC856CW-G

Comchip Technology

BC856CW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website

SOT-23

BC856CW-G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation150mW
Power - Max 150mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage65V
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:192374 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.022325$0.022325
500$0.016416$8.208
1000$0.013680$13.68
2000$0.012550$25.1
5000$0.011729$58.645
10000$0.010911$109.11
15000$0.010552$158.28
50000$0.010376$518.8

BC856CW-G Product Details

BC856CW-G Overview


This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Collector current can be as low as 100mA volts at its maximum.

BC856CW-G Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

BC856CW-G Applications


There are a lot of Comchip Technology BC856CW-G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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