MMBT5551-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT5551-7-F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
160V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBT5551
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
30
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
200mA
Height
1.1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03923
$0.11769
6,000
$0.03450
$0.207
15,000
$0.02978
$0.4467
30,000
$0.02820
$0.846
75,000
$0.02663
$1.99725
150,000
$0.02400
$3.6
MMBT5551-7-F Product Details
MMBT5551-7-F Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 100MHz.A breakdown input voltage of 160V volts can be used.When collector current reaches its maximum, it can reach 600mA volts.
MMBT5551-7-F Features
the DC current gain for this device is 80 @ 10mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 6V the current rating of this device is 200mA a transition frequency of 100MHz
MMBT5551-7-F Applications
There are a lot of Diodes Incorporated MMBT5551-7-F applications of single BJT transistors.