2N6491 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N6491 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
75W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3.5V @ 5A, 15A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
15A
Transition Frequency
5MHz
Frequency - Transition
5MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.141000
$2.141
10
$2.019811
$20.19811
100
$1.905482
$190.5482
500
$1.797625
$898.8125
1000
$1.695873
$1695.873
2N6491 PBFREE Product Details
2N6491 PBFREE Overview
DC current gain in this device equals 25 @ 1A 4V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3.5V @ 5A, 15A.The part has a transition frequency of 5MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.
2N6491 PBFREE Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 3.5V @ 5A, 15A a transition frequency of 5MHz
2N6491 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N6491 PBFREE applications of single BJT transistors.