2STN1360 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 1A 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.In the part, the transition frequency is 130MHz.Input voltage breakdown is available at 60V volts.Maximum collector currents can be below 3A volts.

2STN1360 Features

the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 130MHz

2STN1360 Applications

There are a lot of STMicroelectronics 2STN1360 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver