MMBTA06-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA06-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e0
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
80V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
500mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBTA06
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
4V
hFE Min
100
Continuous Collector Current
500mA
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MMBTA06-7 Product Details
MMBTA06-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Emitter base voltages of 4V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 80V volts.Collector current can be as low as 500mA volts at its maximum.
MMBTA06-7 Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 4V the current rating of this device is 500mA a transition frequency of 100MHz
MMBTA06-7 Applications
There are a lot of Diodes Incorporated MMBTA06-7 applications of single BJT transistors.