MMBTA13-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA13-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e0
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBTA13
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
30V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
300mA
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MMBTA13-7 Product Details
MMBTA13-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.Continuous collector voltages should be kept at 300mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.Parts of this part have transition frequencies of 125MHz.A breakdown input voltage of 30V volts can be used.Maximum collector currents can be below 300mA volts.
MMBTA13-7 Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 100mA a transition frequency of 125MHz
MMBTA13-7 Applications
There are a lot of Diodes Incorporated MMBTA13-7 applications of single BJT transistors.