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MMBTA13-7

MMBTA13-7

MMBTA13-7

Diodes Incorporated

MMBTA13-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBTA13-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e0
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating100mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number MMBTA13
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation300mW
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 300mA
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1555 items

MMBTA13-7 Product Details

MMBTA13-7 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.Continuous collector voltages should be kept at 300mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.Parts of this part have transition frequencies of 125MHz.A breakdown input voltage of 30V volts can be used.Maximum collector currents can be below 300mA volts.

MMBTA13-7 Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz

MMBTA13-7 Applications


There are a lot of Diodes Incorporated MMBTA13-7 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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