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MMBTA14-7-F

MMBTA14-7-F

MMBTA14-7-F

Diodes Incorporated

MMBTA14-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBTA14-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBTA14
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power - Max 300mW
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.059400 $0.0594
500 $0.043676 $21.838
1000 $0.036397 $36.397
2000 $0.033392 $66.784
5000 $0.031207 $156.035
10000 $0.029030 $290.3
15000 $0.028075 $421.125
50000 $0.027606 $1380.3
MMBTA14-7-F Product Details

MMBTA14-7-F Overview


This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.The part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.

MMBTA14-7-F Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz

MMBTA14-7-F Applications


There are a lot of Diodes Incorporated MMBTA14-7-F applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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