MMBTA14-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA14-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBTA14
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power - Max
300mW
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
30V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.059400
$0.0594
500
$0.043676
$21.838
1000
$0.036397
$36.397
2000
$0.033392
$66.784
5000
$0.031207
$156.035
10000
$0.029030
$290.3
15000
$0.028075
$421.125
50000
$0.027606
$1380.3
MMBTA14-7-F Product Details
MMBTA14-7-F Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.The part has a transition frequency of 125MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
MMBTA14-7-F Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 100mA a transition frequency of 125MHz
MMBTA14-7-F Applications
There are a lot of Diodes Incorporated MMBTA14-7-F applications of single BJT transistors.