MMBTA56Q-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA56Q-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Max Breakdown Voltage
80V
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.083160
$0.08316
500
$0.061147
$30.5735
1000
$0.050956
$50.956
2000
$0.046749
$93.498
5000
$0.043690
$218.45
10000
$0.040642
$406.42
15000
$0.039306
$589.59
50000
$0.038649
$1932.45
MMBTA56Q-7-F Product Details
MMBTA56Q-7-F Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A transition frequency of 50MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA56Q-7-F Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 250mV @ 10mA, 100mA a transition frequency of 50MHz
MMBTA56Q-7-F Applications
There are a lot of Diodes Incorporated MMBTA56Q-7-F applications of single BJT transistors.