MMBT4403WT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -750mV.A VCE saturation (Max) of 750mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 200MHz.As a result, it can handle voltages as low as 40V volts.Maximum collector currents can be below 600mA volts.

MMBT4403WT1G Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMBT4403WT1G Applications

There are a lot of ON Semiconductor MMBT4403WT1G applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver