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FZT968TA

FZT968TA

FZT968TA

Diodes Incorporated

FZT968TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT968TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -6A
Frequency 80MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT968
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 80MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 1V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 250mA, 6A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 80MHz
Collector Emitter Saturation Voltage -360mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -6A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.062662 $1.062662
10 $1.002511 $10.02511
100 $0.945765 $94.5765
500 $0.892231 $446.1155
1000 $0.841728 $841.728
FZT968TA Product Details

FZT968TA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of -360mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -6A is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -6A.As a result, the part has a transition frequency of 80MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 6A volts.

FZT968TA Features


the DC current gain for this device is 300 @ 500mA 1V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 450mV @ 250mA, 6A
the emitter base voltage is kept at -6V
the current rating of this device is -6A
a transition frequency of 80MHz

FZT968TA Applications


There are a lot of Diodes Incorporated FZT968TA applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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