FZT968TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT968TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-6A
Frequency
80MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT968
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
80MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 1V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 250mA, 6A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
80MHz
Collector Emitter Saturation Voltage
-360mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
-6V
Continuous Collector Current
-6A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.062662
$1.062662
10
$1.002511
$10.02511
100
$0.945765
$94.5765
500
$0.892231
$446.1155
1000
$0.841728
$841.728
FZT968TA Product Details
FZT968TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of -360mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -6A is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -6A.As a result, the part has a transition frequency of 80MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 6A volts.
FZT968TA Features
the DC current gain for this device is 300 @ 500mA 1V a collector emitter saturation voltage of -360mV the vce saturation(Max) is 450mV @ 250mA, 6A the emitter base voltage is kept at -6V the current rating of this device is -6A a transition frequency of 80MHz
FZT968TA Applications
There are a lot of Diodes Incorporated FZT968TA applications of single BJT transistors.